PART |
Description |
Maker |
CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory 90ns 2M-bit CMOS flash memory 70ns 2M-bit CMOS flash memory 1 Megabit CMOS Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
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http:// CATALYST[Catalyst Semiconductor]
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CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory 512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
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ON Semiconductor
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ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列 EIGHT DARLINGTON ARRAYS
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STMicroelectronics N.V. Allegro MicroSystems STMICROELECTRONICS[STMicroelectronics]
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CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory 150ns 2M-bit CMOS boot block flash memory 120ns 2M-bit CMOS boot block flash memory 2 Megabit CMOS Boot Block Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
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http:// CATALYST[Catalyst Semiconductor]
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GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
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Intel, Corp. Intel Corp.
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MB84VA2007-10 MB84VA20 MB84VA2006 MB84VA2006-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM
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Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
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EN29LV641H EN29LV641L EN29LV641L-70TCP EN29LV641L- |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
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Eon Silicon Solution Inc.
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AM41DL16X4D AM41DL1614DT70IS SPANSIONLLC-AM41DL162 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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http:// ADVANCED MICRO DEVICES INC SPANSION LLC Advanced Micro Devices, Inc.
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LH28F002SCH LH28F002SCH-L LH28F002SCN-L12 LH28F002 |
2-MBIT (256KB x 8) smart voltage flash memory 2-MBIT(256KBx8) SmartVoltage Flash MEMORY 2-MBIT (256 KB x 8) SmartVoltage Flash Memory
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Sharp Electrionic Components
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UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28 8K X 8 STANDARD SRAM, 55 ns, CDIP28 32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷 4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 64 Mb (4M x 16) Boot Sector, Flash Memory SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
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Maxim Integrated Products, Inc.
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UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
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Panasonic Semiconductor Panasonic Corporation
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